Fluorescence has been observed directly across the band gap of semiconducting carbon nanotubes. The energy gap between the bands depends on the strength of bonds between atoms. Depending on the manner in wich the honeycomb lattice is constructed into a cilindrillic shape. There are 3 types: an armachair, a zig-zag and a chiral CNT. Beyond this applied field, the band gap vanishes and the carbon nanotube becomes metallic. Molecule encapsulation inside the single-walled carbon nanotube (SWCNT) core has been demonstrated to be a successful route for the modification of nanotube properties. The design of electronic devices based on carbon nanotubes (CNTs), as a possible semiconductor material in the 2025 timeframe, has been the subject of significant effort during the last decade. We report a detailed comparison of ultraclean suspended and on-substrate carbon nanotubes (CNTs) in order to quantify the effect of the substrate interaction on the effective band gap of metallic nanotubes. Remember that this is the energy difference between the bonding and antibonding orbitals. We obtained individual nanotubes, each encased in a cylindrical micelle, by ultrasonically agitating an aqueous dispersion of raw single-walled carbon nanotubes in sodium dodecyl sulfate and then centrifuging to remove tube bundles, ropes, and residual catalyst. The fundamental parameter which determines transport properties of any electronic device is the electronic band gap. Firstly it depends on the type of (carbon nanotube) CNT. It is well known that carbon materials may undergo a structural transitions upon compression, accompanying with band gap change and even bonds switching [, , , , ]. 2019 Nov 15;250:109486. doi: 10.1016/j.jenvman.2019.109486. So the arrangement of the carbon atoms is important, and we can conclude that dark forms of carbon have a small band gap (absorbing all visible light, and even some infrared light), while diamond has a large band gap (absorbing only ultraviolet light). Carbon forms very strong C-C bonds so it has a very large band gap. if you mean SiC, silicon carbide, energy gap is ~2.86eV @ 300K (ambient temperature) The onset of a semiconductor–metal transition followed by the band gap closure occurs as the electric field reaches a value above 0.30 V Å −1 as shown in figure 2. SWCNT diameter-dependent filling results in band gap modification together with the enhancement of photoluminescence quantum yield. As for short carbon chains, Andrade et al. Band gap tuning and surface modification of carbon dots for sustainable environmental remediation and photocatalytic hydrogen production - A review J Environ Manage . 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